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Published on: September 25, 2020
Demonstration of a low V pi L modulator with GHz bandwidth based on electro-optic polymer-clad silicon slot
1Department of Electrical Engineering, University of Washington, Campus Box 352500, Seattle, WA 98195, USA. dingran@uw.edu
Abstract:
We demonstrate a near-infrared electro-optic modulator with a bandwidth of 3 GHz and a V(pi)L figure of merit of 0.8 V-cm using a push-pull configuration. This is the highest operating speed achieved in a silicon-polymer hybrid system to date by several orders of magnitude. The modulator was fabricated from a silicon strip-loaded slot waveguide and clad in a nonlinear polymer. In this geometry, the electrodes form parts of the waveguide, and the modulator driving voltage drops across a 200 nm slot.

