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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Towards a quantitative description of solid electrolyte conductance switches.

Monica Morales-Masis¹, Hans-Dieter Wiemhöfer, Jan M van Ruitenbeek

¹Kamerlingh Onnes Laboratorium, Universiteit Leiden, PO Box 9504, 2300 RA Leiden, The Netherlands. morales@physics.leidenuniv.nl

|August 20, 2010

Summary

This study quantifies electronic transport in Ag(2)S resistive switching devices. A Hebb-Wagner model explains ion accumulation and nonlinear current-voltage behavior before switching.

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Area of Science:

Materials Science
Solid-State Physics
Electronic Engineering

Background:

Resistive switching devices are crucial for next-generation electronics.
Understanding the underlying transport mechanisms is key to device optimization.
Ag(2)S thin films are promising materials for resistive switching applications.

Purpose of the Study:

To quantitatively analyze steady-state electronic transport in Ag(2)S resistive switching devices.
To model the pre-switching nonlinear current-voltage characteristics.
To elucidate the role of ionic transport in device operation.

Main Methods:

Fabrication of a resistive switching device with Ag(2)S thin film, Pt nano-contact, and Ag reference electrode.
Quantitative analysis of steady-state electronic transport under applied bias voltage.
Modeling of ionic and electronic transport using the Hebb-Wagner treatment for mixed conductors.

Main Results:

Observed strongly nonlinear current-voltage curves at low voltages due to ion accumulation.
Successfully modeled the pre-switching transport using the Hebb-Wagner treatment.
The model accurately describes electron transport across various non-stoichiometries, including supersaturation before silver deposition.

Conclusions:

The Hebb-Wagner model provides a quantitative understanding of steady-state transport in Ag(2)S devices.
Ionic accumulation significantly influences the device's pre-switching behavior.
This work advances the understanding of resistive switching mechanisms, paving the way for improved device design.