Laser-induced diffraction patterns in germanium diselenide amorphous films

We report the characterization of changes produced on germanium diselenide amorphous semiconductor thin films by a focused He-Ne laser beam. The diffraction pattern produced by the laser spot on the sample is studied as a function of the intensity and the irradiation time. At low intensities the state of polarization of the incident beam generates an asymmetry in the induced diffraction pattern. Moreover, if the polarization of the incident beam is rotated, the corresponding asymmetry rotates as well. These results show the difference between thermal and electromagnetic effects on the material. This system may be used as a high density recording medium.