Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Study of the oxidation process of bismuth nanoparticles using NaClO.

Nanotechnology·2023

Same author

Size-dependent thermo-optical properties of embedded Bi nanostructures.

Nanotechnology·2011

Same author

Experimental investigation of vector phase conjugation in Nd(3+):YAG.

Optics letters·2009

Same author

Phase conjugation in amorphous selenium thin films.

Optics letters·2009

Same author

Laser-induced micron and submicron ordering effects in quasi-percolated nanostructured silver thin films.

Nanotechnology·2009

Same author

Pump-probe imaging of nanosecond laser-induced bubbles in agar gel.

Optics express·2008

Search research articles

Related Experiment Video

Updated: Jun 10, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Laser-induced diffraction patterns in germanium diselenide amorphous films.

M Fernandez-Guasti, E Haro-Poniatowski, S Camacho-Lopez

|August 21, 2010

Summary

This summary is machine-generated.

Researchers studied amorphous germanium diselenide thin films using a helium-neon laser. Laser polarization influenced diffraction patterns, indicating potential for high-density optical data storage.

More Related Videos

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

Electrospray Deposition of Uniform Thickness Ge₂₃Sb₇S₇₀ and As₄₀S₆₀ Chalcogenide Glass Films

Published on: August 19, 2016

Related Experiment Videos

Last Updated: Jun 10, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

Electrospray Deposition of Uniform Thickness Ge₂₃Sb₇S₇₀ and As₄₀S₆₀ Chalcogenide Glass Films

Published on: August 19, 2016

Area of Science:

Materials Science
Optoelectronics
Amorphous Semiconductors

Background:

Germanium diselenide (GeSe2) is an amorphous semiconductor with potential applications in optical data storage.
Understanding laser-induced modifications is crucial for developing new recording media.

Purpose of the Study:

To characterize laser-induced changes in germanium diselenide amorphous semiconductor thin films.
To investigate the influence of laser intensity, irradiation time, and polarization on these changes.

Main Methods:

Irradiation of GeSe2 thin films with a focused He-Ne laser beam.
Analysis of the resulting diffraction patterns as a function of laser parameters.
Systematic rotation of the incident beam's polarization to observe effects on diffraction.

Main Results:

Laser irradiation induces changes in the GeSe2 thin films, observable through diffraction patterns.
At low intensities, the polarization state of the He-Ne laser beam creates asymmetry in the diffraction pattern.
Rotation of the incident beam's polarization leads to a corresponding rotation of the induced asymmetry.

Conclusions:

The observed asymmetry is primarily driven by electromagnetic effects rather than purely thermal effects.
The polarization-dependent changes suggest that GeSe2 thin films could be utilized as a high-density recording medium.