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Boron nitride substrates for high-quality graphene electronics.

C R Dean¹, A F Young, I Meric

¹Department of Electrical Engineering, Columbia University, New York, New York 10027, USA. cdean@cisl.columbia.edu

Nature Nanotechnology

|August 24, 2010

Summary

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High-quality graphene devices were fabricated on hexagonal boron nitride (h-BN) substrates. This new method significantly improves graphene device performance compared to traditional silicon dioxide substrates.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene devices on silicon dioxide (SiO2) substrates exhibit poor performance due to disorder.
Suspended graphene offers improved quality but limits device design.
A need exists for high-quality, substrate-supported graphene devices.

Purpose of the Study:

To fabricate and characterize high-quality graphene devices on hexagonal boron nitride (h-BN) substrates.
To evaluate the performance of graphene on h-BN compared to graphene on SiO2.
To explore the potential of h-BN as a superior dielectric substrate for graphene.

Main Methods:

Mechanical transfer of exfoliated mono- and bilayer graphene onto single-crystal h-BN substrates.
Fabrication of graphene devices on h-BN.

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Characterization of device properties, including mobility and carrier inhomogeneity.

Main Results:

Graphene devices on h-BN exhibited mobilities and carrier inhomogeneities nearly an order of magnitude better than those on SiO2.
Devices showed reduced surface roughness, intrinsic doping, and chemical reactivity.
The fabrication process demonstrated the potential for controlled assembly of layered materials.

Conclusions:

Hexagonal boron nitride (h-BN) is a promising dielectric substrate for high-performance graphene devices.
The mechanical transfer method enables the fabrication of advanced graphene heterostructures.
This approach paves the way for realizing complex graphene-based electronic devices.