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Updated: Jun 10, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Quantum Capacitance Extraction for Carbon Nanotube Interconnects
1Department of Electrical and Computer Engineering, Michigan Technological University, Houghton, MI 49931 USA.
Abstract:
Electrical transport in metallic carbon nanotubes, especially the ones with diameters of the order of a few nanometers can be best described using the Tomanaga Luttinger liquid (TL) model. Recently, the TL model has been used to create a convenient transmission line like phenomenological model for carbon nanotubes. In this paper, we have characterized metallic nanotubes based on that model, quantifying the quantum capacitances of individual metallic single walled carbon nanotubes and crystalline bundles of single walled tubes of different diameters. Our calculations show that the quantum capacitances for both individual tubes and the bundles show a weak dependence on the diameters of their constituent tubes. The nanotube bundles exhibit a significantly large quantum capacitance due to enhancement of density of states at the Fermi level.
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