Jove
Visualize
Contact Us

Related Concept Videos

Equivalent Capacitance01:19

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
Equivalent Capacitance01:19

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
Capacitors and Capacitance01:18

Capacitors and Capacitance

A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Biodiversifying bioinspiration.

Bioinspiration & biomimetics·2018
Same author

Thinking in Pictures as a cognitive account of autism.

Journal of autism and developmental disorders·2010
See all related articles
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jun 10, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Quantum Capacitance Extraction for Carbon Nanotube Interconnects.

Vidur Parkash1, Ashok K Goel

  • 1Department of Electrical and Computer Engineering, Michigan Technological University, Houghton, MI 49931 USA.

Nanoscale Research Letters
|August 24, 2010
PubMed
Summary

The Tomanaga Luttinger liquid (TL) model describes electrical transport in metallic carbon nanotubes. Quantum capacitances of individual nanotubes and bundles show weak diameter dependence, with bundles exhibiting higher capacitance due to enhanced density of states.

More Related Videos

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
12:20

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Published on: July 22, 2013

Related Experiment Videos

Last Updated: Jun 10, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
12:20

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

Published on: July 22, 2013

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Electrical transport in metallic carbon nanotubes is complex, particularly for nanoscale diameters.
  • The Tomanaga Luttinger liquid (TL) model provides a theoretical framework for understanding this transport.
  • A recent transmission line-like model simplifies TL theory for carbon nanotubes.

Purpose of the Study:

  • To characterize metallic nanotubes using the TL model.
  • To quantify quantum capacitances of individual single-walled carbon nanotubes (SWCNTs) and their bundles.
  • To investigate the dependence of quantum capacitance on nanotube diameter.

Main Methods:

  • Application of the Tomanaga Luttinger liquid (TL) model.
  • Development of a phenomenological transmission line model for carbon nanotubes.
  • Numerical calculations of quantum capacitances for individual SWCNTs and crystalline bundles.

Main Results:

  • Quantum capacitances for both individual nanotubes and bundles demonstrated a weak dependence on constituent tube diameters.
  • Nanotube bundles displayed significantly larger quantum capacitance compared to individual tubes.
  • Enhanced density of states at the Fermi level in bundles contributes to their higher quantum capacitance.

Conclusions:

  • The TL model effectively characterizes electrical transport in metallic carbon nanotubes.
  • Quantum capacitance is largely independent of diameter for both individual tubes and bundles.
  • Bundled SWCNTs offer a promising platform for applications requiring high quantum capacitance.