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Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

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High-resolution functional epoxysilsesquioxane-based patterning layers for large-area nanoimprinting.

Carlos Pina-Hernandez¹, L Jay Guo, Peng-Fei Fu

¹The University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA.

|August 25, 2010

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New epoxysilsesquioxane (SSQ) materials offer advanced patterning for nanoimprinting. These polymers provide excellent coatability, modulus, mold release, and etch resistance, enabling high-resolution fabrication for integrated circuits.

Area of Science:

Materials Science
Nanotechnology
Polymer Chemistry

Background:

Epoxysilsesquioxane (SSQ)-based materials are crucial for advanced patterning techniques.
Nanoimprinting lithography (NIL) requires materials with specific properties for high-resolution applications.

Purpose of the Study:

To develop and synthesize novel SSQ polymers for large-area, high-resolution nanoimprinting.
To evaluate the performance of these SSQ materials as patterning layers in NIL.

Main Methods:

Synthesis of functionalized SSQ polymers: poly(methyl-co-3-glycidoxypropyl) silsesquioxanes (T(Me)T(Ep)), poly(phenyl-co-3-glycidoxypropyl) silsesquioxanes (T(Ph)T(Ep)), and poly(phenyl-co-3-glycidoxypropyl-co-perfluorooctyl) silsesquioxanes (T(Ph)T(Ep)T(Fluo)).
Incorporation of epoxy and fluoroalkyl functional groups onto the SSQ backbone.

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Characterization of material properties including coatability, modulus, mold release, and dry etch resistance.

Main Results:

The synthesized SSQ materials exhibit excellent coatability, high modulus, good mold release, and superior dry etch resistance.
Epoxy functional groups enable rapid solidification under UV exposure at room temperature.
Fluoroalkyl groups significantly enhance mold release after imprinting.
The absence of metal in these resins ensures compatibility with Silicon CMOS integrated circuit fabrication.

Conclusions:

Functionalized SSQ polymers are highly effective patterning layers for nanoimprinting lithography.
These materials offer a unique combination of properties suitable for high-resolution and large-area fabrication.
The developed SSQ-based resists are promising for advanced semiconductor manufacturing processes.