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Surface diffusion and islanding in semiconductor heterostructures.

H J Gossmann1, G J Fisanick

  • 1AT&T Bell Laboratories, Murray Hill, N.J. 07974.

Scanning Microscopy
|September 1, 1990
PubMed
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Science (New York, N.Y.)·1985
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Surface diffusion in molecular beam epitaxy (MBE) is crucial for semiconductor growth. Researchers studied Ge on Si(100), finding diffusion coefficients depend heavily on coverage and contamination, and observed Stranski-Krastanow growth dynamics.

Area of Science:

  • Materials Science
  • Surface Science
  • Semiconductor Physics

Background:

  • Molecular beam epitaxy (MBE) is vital for creating novel semiconductor materials and structures.
  • Surface diffusion significantly impacts semiconductor growth, affecting islanding, critical thickness, and epitaxial temperatures.
  • The SiGe system serves as a model for studying surface diffusion and islanding in semiconductor heterostructures.

Purpose of the Study:

  • To investigate surface diffusion and islanding phenomena in the SiGe system using MBE.
  • To determine the coverage dependence of Ge diffusion coefficients on Si(100).
  • To analyze the real-time evolution of islanding and the temperature dependence of Stranski-Krastanow (SK) layer thickness.

Main Methods:

  • Utilized patterned deposit time evolution and kinetic studies of nucleation and growth.

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  • Performed in situ annealing experiments to observe islanding processes in real time.
  • Measured diffusion coefficients for Ge on Si(100) under varying conditions, including contamination and e-beam irradiation.

    • Main Results:

    • Disordered laminar growth observed at 300 K, transitioning to Stranski-Krastanow (SK) growth at elevated temperatures.
    • Ge diffusion coefficients on Si(100) exhibit significant coverage dependence and high sensitivity to carbon contamination (~0.05 ML) and e-beam irradiation.
    • Islanding transformation from a uniform layer to SK morphology initiated around 250°C and completed by 400°C (at 0.1°C/s ramp rate).
    • A novel temperature dependence of the SK-layer thickness was discovered and found to agree with theoretical predictions.

    Conclusions:

    • Surface diffusion is a critical factor in MBE growth, with Ge diffusion on Si(100) being highly sensitive to surface conditions.
    • The study elucidates the mechanisms of islanding and Stranski-Krastanow growth, providing quantitative diffusion data.
    • Experimental findings on SK-layer thickness temperature dependence validate theoretical models, advancing the understanding of semiconductor heterostructure formation.