Modeling gross damage in tile-based nanomanufacturing by DNA self-assembly

This paper proposes a novel model for gross damage as occurring in tile-based nanomanufacturing by DNA self-assembly. Gross damage occurs due to exogenous agents (such as radiation and tip-sample interactions) and is modeled as a hole (with a large number of empty tile sites) in the aggregate of the self-assembly. A stochastic analysis based on Markov chains for the tile binding process is pursued for regrowth of the tiles. This analysis establishes resilience as the probability to regrow the target pattern in the area affected by the gross damage. The conditions by which regrowth of a hole is favorable (i.e., at high resilience) compared with normal growth are established by considering temperature of aggregation and bond energy. As examples, two patterns for nano interconnects are analyzed based on the proposed model.