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Related Concept Videos

Small-signal Diode Model01:18

Small-signal Diode Model

In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
Clamper Circuit01:14

Clamper Circuit

A clamper circuit, also known as a DC restorer, represents a specialized variant of the rectifier circuit, notable for its method of taking the output across the diode rather than the capacitor. This configuration lends to several distinctive applications, particularly in handling square wave inputs.
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to conduct,...

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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

Note: Dead time causes and correction method for single photon avalanche diode devices.

L Neri1, S Tudisco, F Musumeci

  • 1Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, via S. Sofia 62, Catania 95123, Italy.

The Review of Scientific Instruments
|September 7, 2010
PubMed
Summary
This summary is machine-generated.

This study shows that passive quenched single photon avalanche diodes (SPADs) can accurately measure high photon rates up to 10(7) cps. Advanced analysis overcomes dead time saturation, matching active quenched SPAD performance.

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Time-resolved Photophysical Characterization of Triplet-harvesting Organic Compounds at an Oxygen-free Environment Using an iCCD Camera
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Related Experiment Videos

Last Updated: Jun 9, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
07:38

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Published on: April 18, 2019

Time-resolved Photophysical Characterization of Triplet-harvesting Organic Compounds at an Oxygen-free Environment Using an iCCD Camera
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Time-resolved Photophysical Characterization of Triplet-harvesting Organic Compounds at an Oxygen-free Environment Using an iCCD Camera

Published on: December 27, 2018

Area of Science:

  • Photonics and Semiconductor Devices
  • Radiation Detection and Measurement

Background:

  • Single Photon Avalanche Diodes (SPADs) represent an advancement over traditional Geiger-Muller (GM) detectors.
  • SPADs utilize semiconductor technology for single photon detection, primarily in the visible spectrum.

Purpose of the Study:

  • To investigate signal generation and dead time (DT) mechanisms in SPADs under constant light.
  • To evaluate the performance of passive quenched SPADs for high count rate measurements.
  • To compare passive quenched SPADs with active quenched devices and GM counters.

Main Methods:

  • Analysis of signal generation and dead time mechanisms in a passive quenched SPAD.
  • Application of a hybrid dead time model to account for device behavior.
  • Evaluation of incident photon rates up to 10(7) counts per second (cps).

Main Results:

  • Developed methods to discriminate low rate signals from afterpulses and noise.
  • Successfully overcame dead time saturation effects for accurate high rate measurements.
  • Demonstrated that a passive quenched SPAD with 0.97 µs dead time achieves performance comparable to active quenched devices.

Conclusions:

  • Passive quenched SPADs, with appropriate data analysis, offer a viable alternative to active quenched devices for constant light measurements.
  • The study highlights the importance of considering SPAD-specific effects like afterpulsing, reduced photon detection efficiency, and noise.
  • Accurate high photon rate measurement is achievable with passive quenched SPADs, challenging previous limitations.