Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Measurement of electron temperature anisotropy in ohmically heated plasmas in TST-2 using a double-pass Thomson scattering system.

The Review of scientific instruments·2025

Same author

Impact of avalanche type of transport on internal transport barrier formation in tokamak plasmas.

Scientific reports·2023

Same author

Energy-selective confinement of fusion-born alpha particles during internal relaxations in a tokamak plasma.

Nature communications·2022

Same author

Vacuum ultraviolet photoluminescence of NaMgF<sub>3</sub>:Sm and NaMgF<sub>3</sub>:Sm,Ce: energy levels of the lanthanides in NaMgF<sub>3</sub>:Ln compounds.

Methods and applications in fluorescence·2022

Same author

Conceptual design of a collimator for the neutron emission profile monitor in JT-60SA using Monte Carlo simulations.

The Review of scientific instruments·2020

Same author

Agrobacterium tumefaciens-mediated transformation of Robinia pseudoacacia.

Plant cell reports·2019

Search research articles

Related Experiment Video

Updated: Jun 8, 2026

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Single-mode PbSnTe laser with a buried heterostructure.

Y Nishijima, K Shinohara

|September 11, 2010

Summary

Researchers developed a novel lead tin telluride (PbSnTe) laser using a two-step epitaxial growth method. This buried heterostructure laser achieves single-mode operation at 8 µm, demonstrating improved performance at low temperatures.

Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Development of single-mode lasers is crucial for various optical applications.
Lead tin telluride (PbSnTe) alloys offer potential for mid-infrared laser emission.
Buried heterostructure designs are essential for stable laser operation.

Purpose of the Study:

To develop a single-mode PbSnTe laser utilizing a buried heterostructure.
To optimize the growth process for improved laser performance.
To characterize the laser's operational parameters at cryogenic temperatures.

Main Methods:

Employed a two-step liquid-phase epitaxial growth technique.
Calculated active-layer dimensions for fundamental transverse-mode operation.

More Related Videos

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Related Experiment Videos

Last Updated: Jun 8, 2026

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Simulated tin diffusion to determine optimal growth temperature and analyzed crystal growth mechanisms for buried heterostructure formation.

Main Results:

Successfully developed a PbSnTe buried heterostructure laser.
Achieved single-mode operation at an 8 µm wavelength with 1.7 mW power output at 50 K.
Demonstrated continuous-wave (cw) operation with a threshold current of 60 mA at 80 K, close to pulsed operation thresholds. Maximum operating temperatures reached 105 K (cw) and 144 K (pulsed).

Conclusions:

The developed two-step liquid-phase epitaxial growth method enables efficient buried heterostructure formation for PbSnTe lasers.
The laser exhibits promising single-mode performance in the mid-infrared spectrum.
The results indicate potential for PbSnTe lasers in low-temperature optoelectronic applications.