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Updated: Jun 8, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN
Hyung Gu Kim1, Hyun Kyu Kim, Hee Yun Kim
1School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, South Korea.
Abstract:
We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN-sapphire interface in InGaN/GaN LEDs. A specific SiO(2) mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN-air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20 mA.
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