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Related Experiment Video

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Tilt-modulated spatial phase imaging method for wafer-mask leveling in proximity lithography.

Shaolin Zhou1, Yong Yang, Lixin Zhao

  • 1State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics & Electronics, Chinese Academy of Sciences, Chengdu 610209, China. shaolinzhou@gmail.com

Optics Letters
|September 18, 2010
PubMed
Summary

This study introduces a novel tilt-modulated phase imaging technique for precise wafer-mask leveling in proximity lithography. The method effectively corrects gap inconsistencies, ensuring high accuracy in semiconductor manufacturing processes.

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Area of Science:

  • Semiconductor Manufacturing
  • Optical Metrology
  • Lithography Technology

Background:

  • Proximity lithography requires precise alignment between the mask and wafer.
  • Gap inconsistencies and tilts between the mask and wafer degrade lithographic accuracy.
  • Existing leveling methods can be complex and time-consuming.

Purpose of the Study:

  • To develop a new method for wafer-mask leveling in proximity lithography.
  • To address and correct gap inconsistencies and tilts.
  • To achieve accurate leveling at a single measurement spot.

Main Methods:

  • Demonstration of a tilt-modulated phase imaging technique.
  • Utilizing two gratings with close periods as leveling marks on the mask.
  • Projecting diffracted grating images back onto each other via wafer reflection.
  • Modulating wafer-mask tilts into the phase distribution of the interference field.

Main Results:

  • Wafer-mask tilts in orthogonal sections are directly modulated into phase distribution.
  • Leveling corrections are determined by fringe frequency and angle deviation.
  • Accurate wafer-mask leveling achieved at a single spot.
  • Demonstrated resolution of tilts as small as 10⁻³ radians.

Conclusions:

  • The tilt-modulated phase imaging method effectively corrects gap inconsistencies for wafer-mask leveling.
  • This technique offers a precise and efficient solution for proximity lithography alignment.
  • The method is validated through computational and experimental results.