Mechanisms for laser-induced functional damage to silicon charge-coupled imaging sensors

We measured the functional degradation of silicon CCD photodetector arrays when subjected to Nd:YAG laser irradiation at 1.06 µm by 10-ns pulses. Operational tests such as dark leakage, point-spread function, and modulation transfer function were developed for testing individual pixels and applied to the testing of locally laser-damaged CCD arrays. Testing revealed that the primary failure mechanism was the spreading of the point-spread function in the direction of clocked charge motion that resulted from a decreased depth of potential wells within the laser-damaged spot. Lesser degradation was observed at pixels near the damaged spot that were served by clock lines that traversed the damage spot. This damage behavior was correlated with decreased breakdown voltage and increased leakage current between adjacent clock lines. Subsequent morphological and TEM examination of similarly constructed chips indicated that laser heating of the polysilicon clock lines led to degradation of the adjacent isolation oxide between clock lines. Functional damage occurred at locations where two clock lines were very close to each other, and the thin oxide layer separating them was subjected to high temperatures that resulted from melting of the neighboring polysilicon.