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Related Experiment Video

Updated: Jun 8, 2026

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
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Silicide layer growth rates in Mo/Si multilayers.

R S Rosen, D S Vernon, G Stearns

    Applied Optics
    |September 22, 2010
    PubMed
    Summary
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    Sputter-deposited molybdenum/silicon multilayers show excellent thermal stability. Annealing studies reveal negligible interlayer growth at ambient temperatures, indicating suitability for soft-x-ray projection lithography.

    Area of Science:

    • Materials Science
    • Thin Film Technology
    • Surface Science

    Background:

    • Molybdenum/silicon (Mo/Si) multilayers are critical components in advanced lithography systems.
    • Understanding their thermal stability is essential for device longevity and performance.

    Purpose of the Study:

    • To investigate the thermal stability of sputter-deposited Mo/Si multilayers.
    • To quantify interlayer growth kinetics under annealing conditions relevant to potential applications.

    Main Methods:

    • Annealing studies were conducted on Mo/Si multilayers at temperatures ranging from 250-350 °C.
    • Samples were annealed for durations spanning 0.5 to 3000 hours to observe long-term effects.
    • Interlayer growth and interdiffusion coefficients were analyzed.

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    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

    Published on: July 17, 2020

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    Last Updated: Jun 8, 2026

    Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
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    Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

    Published on: May 22, 2015

    Developing High Performance GaP/Si Heterojunction Solar Cells
    10:31

    Developing High Performance GaP/Si Heterojunction Solar Cells

    Published on: November 16, 2018

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
    06:57

    Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

    Published on: July 17, 2020

    Main Results:

    • Two distinct stages of thermally activated Mo/Si interlayer growth were identified: an initial rapid phase followed by a slower, steady-state phase.
    • Interdiffusion coefficients were found to be higher for Mo-on-Si interfaces compared to Si-on-Mo interfaces.
    • Extrapolation to ambient temperature suggests negligible interlayer growth.

    Conclusions:

    • Mo/Si multilayers exhibit significant thermal stability at low annealing temperatures.
    • The observed negligible interlayer growth at ambient temperatures supports their use in demanding applications like soft-x-ray projection lithography.
    • The asymmetry in interdiffusion coefficients provides insights into interface-specific growth mechanisms.