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Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
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Resist alternatives for sub-0.35-µm lithography by using highly attenuated radiation.

R R Kunz, M A Hartney, M Rothschild

    Applied Optics
    |September 22, 2010
    PubMed
    Summary

    New photoresist imaging techniques accommodate deep UV to soft x-ray lithography, enhancing wavelength flexibility and improving exposure tolerances for smaller microelectronic devices.

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    Last Updated: Jun 8, 2026

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    Published on: February 12, 2017

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    Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices

    Published on: January 27, 2017

    Area of Science:

    • Materials Science
    • Nanotechnology
    • Semiconductor Manufacturing

    Background:

    • Photoresist absorbance increases significantly at shorter wavelengths (deep UV to soft x-ray).
    • Traditional lithography methods face challenges with high absorbance at these wavelengths.
    • Scaling down device dimensions to 0.1 µm necessitates advanced lithographic approaches.

    Purpose of the Study:

    • To explore novel photoresist processes for advanced lithography.
    • To address challenges posed by strong resist film absorbance at deep UV and soft x-ray wavelengths.
    • To develop imaging techniques offering improved wavelength flexibility and process tolerances.

    Main Methods:

    • Demonstration of silylation processes as manufacturable near-surface-imaged resists.
    • Development of new chemistries for near-surface and at-the-surface imaging.
    • Evaluation of these approaches for microelectronic device fabrication.

    Main Results:

    • Silylation processes are manufacturable for near-surface imaging in deep UV lithography.
    • Emerging chemistries enable near-surface and at-the-surface imaging.
    • These methods offer enhanced wavelength flexibility and potential for improved exposure and focus tolerances.

    Conclusions:

    • Novel photoresist imaging strategies are crucial for future lithography.
    • Near-surface and at-the-surface imaging techniques provide solutions for high absorbance challenges.
    • These advancements are vital for fabricating microelectronic devices at dimensions down to 0.1 µm.