Successive development optimization of resist kinoforms manufactured with direct-writing, electron-beam lithography

It is shown that multilevel SAL 110 resist kinoforms can be developed stepwise. Measurements of the kinoform diffraction pattern, performed between the development steps, permitted correct final developments to be made. No significant relief shape degradation was observed for development times as high as 25 min. The results imply that the electron-beam exposure doses, and hence the exposure time, can be reduced by a factor of 3 compared with doses used currently.