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Updated: Jun 8, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

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Published on: November 30, 2012

Waveguide polarizers processed by localized plasma etching.

D L Veasey, D R Larson, I Veigl

|September 24, 2010

Summary

This summary is machine-generated.

We developed a new plasma-etching technique for precisely controlling semiconductor thickness in waveguides. This method achieves high polarization extinction ratios, crucial for optical devices.

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Last Updated: Jun 8, 2026

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Area of Science:

Materials Science
Optical Engineering
Plasma Physics

Background:

Channel waveguides are essential for integrated optics.
Precise control over semiconductor film thickness is critical for device performance.
Polarization control is a key challenge in optical waveguide design.

Purpose of the Study:

To develop a localized plasma-etching process for in situ monitoring and precise trimming of semiconductor films on channel waveguides.
To optimize the etching process for maximizing the polarization extinction ratio in semiconductor-clad waveguides.

Main Methods:

Deposition of hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition.
Application of a downstream localized plasma-etching process with in situ light throughput monitoring.
Accurate trimming of semiconductor thickness to enhance polarization selectivity.

Main Results:

Achieved accurate in situ monitoring of light throughput during semiconductor thickness trimming.
Successfully maximized the extinction ratio between TE and TM polarizations.
Obtained polarization extinction ratios exceeding 30 dB for both TE-pass and TM-pass polarizers.

Conclusions:

The developed localized plasma-etching process enables precise control over semiconductor thickness in waveguides.
This technique is effective for fabricating high-performance polarizers with excellent extinction ratios.
The method offers a viable solution for advanced integrated optical device manufacturing.