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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Five-stage free-space optical switching network with field-effect transistor self-electro-optic-effect-device

F B McCormick, T J Cloonan, A L Lentine

|September 24, 2010

Summary

This study details a five-stage optical switching fabric using smart-pixel nodes. Initial tests demonstrate successful operation at 50 Mbits/s, with further development targeting higher speeds.

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Area of Science:

Optoelectronics
Optical switching networks
Integrated photonics

Background:

Development of high-speed optical switching fabrics is crucial for advanced communication systems.
Smart-pixel technology offers a pathway to compact and efficient optical switching nodes.
Previous research has explored various architectures for optical interconnects.

Purpose of the Study:

To design, construct, and test a five-stage, 32x16 interconnected optical switching fabric.
To evaluate the performance of smart-pixel switching nodes in a banyan network architecture.
To assess the feasibility of high-speed optical data transmission using integrated optoelectronic components.

Main Methods:

Utilized monolithically integrated GaAs field-effect transistors, p-i-n detectors, and self-electro-optic-device modulators for switching nodes.
Interconnected five stages of node arrays into a two-dimensional banyan network using computer-generated holograms.
Employed two-dimensional fiber-bundle matrices for system input/output and advanced optical hardware including frequency-stabilized lasers.

Main Results:

Successfully operated a five-stage switching fabric at 50 Mbits/s with 15 active inputs/outputs.
Demonstrated the functionality of smart-pixel nodes integrating receivers, logic, memory, and transmitters.
Achieved partial success in operating two stages at 155 Mbits/s, with 8 out of 15 active nodes functioning correctly.

Conclusions:

The designed smart-pixel switching fabric demonstrates potential for high-speed optical communication.
The banyan network architecture with integrated optoelectronic nodes is viable for optical switching.
Further optimization is needed to achieve full operational capacity at 155 Mbits/s.