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Published on: August 2, 2019
Confined states of individual type-II GaSb/GaAs quantum rings studied by cross-sectional scanning tunneling
Rainer Timm1, Holger Eisele, Andrea Lenz
1Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany. timm@physik.tu-berlin.de
Abstract:
Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.
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