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Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Structural transition from MgZnO nanowires to ultrathin nanowalls by surface separation: growth evolution and gas
Dong Chan Kim1, Ju Ho Lee, Sanjay Kumar Mohanta
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan-gu, Suwon, Gyeonggi-do, Republic of Korea.
Abstract:
This paper reports a spontaneous method of controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the in-plane random motion of the seed crystals formed by surface phase separation. Seed crystals with a relatively Zn-rich phase were formed by the simultaneous injection of Mg and Zn and became strongly networked when the Zn/Mg flux ratio was increased at high temperatures, leading to the formation of MgZnO nanowalls on various conducting substrates. The hydrogen sensing performance of the MgZnO nanowalls with a two-dimensional network structure was superior to that of the one-dimensional MgZnO nanowires. Based on the microstructural characterizations, the growth procedure for the structural transition from MgZnO nanowires to nanowalls on the Si substrates was proposed.

