Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Supercurrent in the Presence of Direct Transmission and a Resonant Localized State.

Physical review letters·2024
Same author

Superconducting spintronic tunnel diode.

Nature communications·2022
Same author

Braiding and All Quantum Operations with Majorana Modes in 1D.

Physical review letters·2021
Same author

Dynamical Spin Polarization of Excess Quasiparticles in Superconductors.

Physical review letters·2020
Same author

Spin Pumping and Torque Statistics in the Quantum Noise Limit.

Physical review letters·2017
Same author

Supercurrents in Unidirectional Channels Originate from Information Transfer in the Opposite Direction: A Theoretical Prediction.

Physical review letters·2017

Related Experiment Video

Updated: Jun 8, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fully overheated single-electron transistor.

M A Laakso1, T T Heikkilä, Yuli V Nazarov

  • 1Low Temperature Laboratory, Aalto University, Post Office Box 15100, FI-00076 Aalto, Finland. matti.laakso@tkk.fi

Physical Review Letters
|September 28, 2010
PubMed
Summary
This summary is machine-generated.

This study examines the single-electron transistor, revealing three transport regimes. Researchers observed unusual temperature sensitivity and a large Fano factor in current noise at regime transitions.

More Related Videos

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

Related Experiment Videos

Last Updated: Jun 8, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

Area of Science:

  • Quantum electronics
  • Mesoscopic physics
  • Solid-state physics

Background:

  • Single-electron transistors (SETs) are crucial for quantum computing and sensitive electrometers.
  • Understanding heat transport is vital for SET performance and stability.
  • Electron transfers are the primary heat exchange mechanism in fully overheated SETs.

Purpose of the Study:

  • To investigate the heat balance and transport regimes in a fully overheated single-electron transistor.
  • To identify distinct electrical transport mechanisms and their dependence on temperature.
  • To analyze the behavior of current noise, particularly the Fano factor, at regime transitions.

Main Methods:

  • Theoretical modeling of electron transport in a single-electron transistor.
  • Analysis of heat balance equations dominated by electron transfers.
  • Characterization of transport regimes including cotunneling and single-electron tunneling.
  • Investigation of current noise properties and the Fano factor.

Main Results:

  • Identified three distinct transport regimes: cotunneling, single-electron tunneling, and a mixed regime.
  • Observed an anomalous sensitivity to temperature fluctuations at the crossover between single-electron tunneling and the mixed regime.
  • Measured an exceptionally large Fano factor of current noise at this crossover point.

Conclusions:

  • The study elucidates the complex interplay between heat balance and charge transport in SETs.
  • Anomalous noise behavior highlights critical points in transistor operation.
  • Findings provide insights for designing more stable and predictable quantum electronic devices.