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Updated: Jun 8, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Many-body effects in the excitation spectrum of a defect in SiC
Michel Bockstedte1, Andrea Marini, Oleg Pankratov
1Nano-Bio Spectroscopy Group and ETSF Scientific Development Centre, Departamento Física de Materiales, Universidad del País Vasco, Centro de Física de Materiales CSIC-UPV/EHU-MPC and DIPC, Avenida Tolosa 72, E-20018 San Sebastián, Spain.
Abstract:
We show that electron correlations control the photophysics of defects in SiC through both renormalization of the quasiparticle band structure and excitonic effects. We consider the carbon vacancy with two possible excitation channels that involve conduction and valence bands. Corrections to the Kohn-Sham ionization levels strongly depend on the defect charge state. Excitonic effects introduce a redshift of 0.23 eV. The analysis reassigns excitation mechanism at the thresholds in photoinduced paramagnetic resonance measurements [J. Dashdorj, J. Appl. Phys. 104, 113707 (2008)].
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