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Related Experiment Video

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Published on: August 2, 2019

Microwave zero-resistance states in a bilayer electron system.

S Wiedmann¹, G M Gusev, O E Raichev

¹LNCMI-CNRS, UPR 3228, BP 166, 38042 Grenoble Cedex 9, France.

Physical Review Letters

|September 28, 2010

Summary

High-mobility electron systems exhibit zero-resistance states (ZRS) under microwave irradiation, even with intersubband scattering. This phenomenon, observed in GaAs quantum wells, correlates with conditions for absolute negative resistivity.

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Area of Science:

Condensed Matter Physics
Quantum Materials
Semiconductor Nanostructures

Background:

High-mobility electron systems are crucial for advanced electronic devices.
Quantum wells confine electrons, leading to unique quantum phenomena.
Microwave irradiation can alter electron behavior in confined systems.

Purpose of the Study:

Investigate magnetotransport in a high-mobility electron bilayer.
Explore the emergence of zero-resistance states (ZRS) under microwave irradiation.
Analyze the influence of intersubband scattering on ZRS.

Main Methods:

Performed magnetotransport measurements on a GaAs quantum well system.
Applied continuous microwave irradiation with varying frequency, power, and temperature.
Compared experimental findings with theoretical models of absolute negative resistivity.

Main Results:

Observed vanishing dissipative resistance under microwave irradiation.
Detected profound zero-resistance states (ZRS) despite intersubband scattering.
Found a correlation between ZRS appearance and conditions for absolute negative resistivity.

Conclusions:

Microwave irradiation induces novel transport phenomena in electron bilayer systems.
Zero-resistance states are achievable even with competing scattering mechanisms.
The study provides experimental evidence supporting theories of absolute negative resistivity.