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Carrier localization on surfaces of organic semiconductors gated with electrolytes
Yu Xia1, Wei Xie, P Paul Ruden
1Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis 55455, USA.
Abstract:
Organic semiconductor single crystals gated with electrolytes exhibit a pronounced maximum in channel conductance at hole densities >10(13) cm(-2). The cause is a strong decrease in the hole mobility with increasing charge density, which is explained in terms of a percolation model that incorporates trapping of holes by ions at the semiconductor-electrolyte interface. In the case of rubrene crystals, the peak channel conductance occurs at hole densities near 3 × 10(13) cm(-2). The magnitude of the effect will be large for semiconductors with low dielectric constants and narrow bandwidths, and thus is likely to be a general phenomenon in organic semiconductors gated with electrolytes.
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