Resolved sideband emission of InAs/GaAs quantum dots strained by surface acoustic waves.

M Metcalfe1, S M Carr, A Muller

  • 1Joint Quantum Institute, National Institute of Standards and Technology and University of Maryland,Gaithersburg, Maryland 20899, USA.

Physical Review Letters
|September 28, 2010
PubMed
Summary

Researchers explored how Indium Arsenide/Gallium Arsenide (InAs/GaAs) quantum dots (QDs) respond to strain. They observed phonon sidebands and demonstrated optical frequency conversion, a key step for laser sideband cooling of nanomechanical resonators.

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