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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Evolution of the potential-energy surface of amorphous silicon

Houssem Kallel1, Normand Mousseau, François Schiettekatte

  • 1Département de Physique and Regroupement Québécois sur les Matériaux de Pointe (RQMP), Université de Montréal, C.P. 6128, Succursale Centre-Ville, Montr éal, Québec, Canada H3C 3J7. houssem.kallel@umontreal.ca

Physical Review Letters
|September 28, 2010
PubMed

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