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Resonant scattering by realistic impurities in graphene
T O Wehling1, S Yuan, A I Lichtenstein
1I. Institut für Theoretische Physik, Universität Hamburg, Jungiusstraße 9, D-20355 Hamburg, Germany. twehling@physnet.uni-hamburg.de
Physical Review Letters
|September 28, 2010
Summary
Realistic impurities in graphene create midgap states, causing conductivity to depend sublinearly on carrier concentration. This finding aligns with recent experimental observations in graphene research.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Graphene exhibits unique electronic properties, but its conductivity can be affected by impurities.
- Understanding the impact of realistic impurities is crucial for graphene-based electronic applications.
Purpose of the Study:
- To develop a first-principles theory for resonant impurities in graphene.
- To investigate the effect of common impurities on graphene's conductivity.
Main Methods:
- First-principles theory and density functional calculations.
- Low-energy tight-binding model and Boltzmann transport theory.
- Numerically exact Kubo formula approach.
Main Results:
- A broad range of realistic impurities induce midgap states near the neutrality point (±0.03 eV).
- These impurities lead to a characteristic sublinear dependence of conductivity on carrier concentration.
- Theoretical predictions are consistent with recent experimental findings.
Conclusions:
- The developed theory accurately describes the behavior of resonant impurities in graphene.
- Realistic impurities significantly influence graphene's electronic transport properties.
- This work provides a theoretical framework for understanding impurity effects in graphene devices.
