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Updated: Jun 8, 2026

Magnetic Tweezers for the Measurement of Twist and Torque

Magnetic Tweezers for the Measurement of Twist and Torque

Published on: May 19, 2014

Perpendicular spin torque in magnetic tunnel junctions.

O G Heinonen¹, S W Stokes, J Y Yi

¹Recording Heads Operation, Seagate Technology, 7801 Computer Ave, Bloomington, Minnesota 55435, USA. heinonen@anl.gov

Physical Review Letters

|September 28, 2010

Summary

This summary is machine-generated.

Researchers quantified perpendicular spin torque in magnetic tunnel junctions. This torque, crucial for spintronics, decreases linearly with bias voltage, matching micromagnetic modeling predictions.

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Area of Science:

Spintronics
Condensed Matter Physics
Materials Science

Background:

Electrical currents in magnetic heterostructures generate spin torque, enabling control of magnetization.
Accurate measurement and calculation of all spin torque components remain challenging.

Purpose of the Study:

To quantitatively determine the perpendicular spin torque in MgO magnetic tunnel junctions.
To investigate the relationship between bias voltage and perpendicular spin torque.

Main Methods:

Measurement of the lowest ferromagnetic resonance frequency in MgO magnetic tunnel junctions.
Application of micromagnetic modeling to analyze spin torque effects.

Main Results:

The lowest ferromagnetic resonance frequency decreases linearly with increasing bias voltage.
This frequency decrease is attributed to the perpendicular spin torque component.
A quantitative, bias-voltage-dependent effective field for perpendicular spin torque was determined.
The perpendicular spin torque effective field magnitude was found to be comparable to the in-plane spin torque effective field.

Conclusions:

Perpendicular spin torque in MgO magnetic tunnel junctions is accurately quantifiable via ferromagnetic resonance frequency measurements.
The effective field of perpendicular spin torque exhibits a linear dependence on bias voltage.
Understanding perpendicular spin torque is essential for advancing spintronic device applications.