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Picometer-Precision Atomic Position Tracking through Electron Microscopy
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Domain-wall depinning assisted by pure spin currents.

D Ilgaz1, J Nievendick, L Heyne

  • 1Fachbereich Physik, Universität Konstanz, Universitätsstraße 10, 78457 Konstanz, Germany.

Physical Review Letters
|September 28, 2010
PubMed
Summary

We demonstrate efficient domain wall depinning using pure diffusive spin currents in a nonlocal spin valve. This method shows over ten times greater efficiency than conventional current-induced domain wall motion.

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Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Domain walls in ferromagnetic materials are crucial for magnetic memory devices.
  • Controlling domain wall motion is essential for device performance.
  • Current-induced domain wall motion is a key area of spintronic research.

Purpose of the Study:

  • To investigate the depinning of domain walls using pure diffusive spin currents.
  • To evaluate the efficiency of spin current-induced domain wall motion in a nonlocal spin valve.
  • To compare this efficiency with conventional current-induced domain wall motion.

Main Methods:

  • Fabrication of a nonlocal spin valve structure with two Permalloy ferromagnetic elements and a copper nonmagnetic spin conduit.
  • Injection of spin current into the structure.
  • Measurement of the domain wall depinning field dependence on spin current density.

Main Results:

  • Achieved an efficiency of 6×10⁻¹⁴ T/(A/m²) for domain wall depinning by diffusive spin currents.
  • Observed an efficiency more than an order of magnitude greater than conventional current-induced domain wall motion.
  • Theoretical analysis indicated that surface torques from absorbed spin current are responsible for efficient depinning.

Conclusions:

  • Pure diffusive spin currents offer a highly efficient method for domain wall depinning.
  • The nonlocal spin valve architecture facilitates efficient spin current absorption and domain wall manipulation.
  • This research opens avenues for advanced spintronic devices with improved performance.