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Related Experiment Video

Updated: Jun 8, 2026

Photoelectron Imaging of Anions Illustrated by 310 Nm Detachment of F−

Photoelectron Imaging of Anions Illustrated by 310 Nm Detachment of F⁻

Published on: July 27, 2018

Effective low-energy model for f-electron delocalization.

K A Al-Hassanieh¹, Yi-Feng Yang, Ivar Martin

¹Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.

Physical Review Letters

|September 28, 2010

Summary

We studied the periodic Anderson model (PAM) and found that doping can induce a Mott transition for f-electron delocalization. This transition is driven by a momentum-dependent hybridization near the Fermi level.

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Photoelectron Imaging of Anions Illustrated by 310 Nm Detachment of F−

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Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids

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Published on: May 27, 2020

Area of Science:

Condensed Matter Physics
Quantum Materials
Many-Body Physics

Background:

The periodic Anderson model (PAM) describes interactions between localized f-electrons and conduction band electrons.
Understanding f-electron delocalization is crucial for predicting material properties.
Interband hybridization plays a key role in electronic behavior.

Purpose of the Study:

To investigate the f-electron delocalization transition in the PAM.
To derive an effective low-energy Hamiltonian for specific hybridization conditions.
To explore the impact of doping on f-electron Mott transitions.

Main Methods:

Derivation of an effective low-energy Hamiltonian, H(eff), by expanding in the small parameter V0/t.
Analysis of the t-J f-band coupled via Kondo exchange to broadband electrons.
Density-matrix renormalization group (DMRG) calculations to demonstrate the transition.

Main Results:

The effective Hamiltonian reveals a Kondo exchange coupling between the f-band and broadband electrons.
A doping-induced Mott transition for f-electron delocalization was identified.
The suppression of interband hybridization near the Fermi level is a key factor.

Conclusions:

The derived effective Hamiltonian provides a simplified yet accurate model for studying f-electron delocalization.
Doping is a viable mechanism to control the Mott transition of f-electrons.
The findings offer insights into the electronic properties of strongly correlated materials.