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CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer
1CEA LETI MINATEC, Grenoble, France. guillaume.gay@cea.fr
Nanotechnology
|September 30, 2010
Summary
A new method uses aluminum oxide nanodots to transfer block copolymer templates onto semiconductor substrates. This process enables the precise patterning of high aspect ratio silicon nanowires and nanopillars for advanced electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Manufacturing
Background:
- Block copolymer self-assembly is a powerful technique for creating nanoscale patterns.
- Transferring these patterns to semiconductor substrates for device fabrication remains a challenge.
Purpose of the Study:
- To demonstrate a generic, CMOS-compatible method for transferring block copolymer templates to semiconductor substrates.
- To enable the fabrication of high aspect ratio nanostructures using a robust hard mask.
Main Methods:
- Utilizing polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) self-assembly to create a hole array.
- Selectively depositing aluminum oxide (Al(2)O(3)) nanodots via atomic layer deposition within the holes.
- Employing the Al(2)O(3) nanodots as a plasma etching mask to pattern silicon.
Main Results:
- Successfully transferred the block copolymer template to a silicon substrate.
- Demonstrated the effectiveness of Al(2)O(3) nanodots as a highly etch-resistant hard mask.
- Fabricated silicon nanowires and nanopillars with high aspect ratios exceeding 10.
Conclusions:
- The developed strategy offers a versatile and CMOS-compatible approach for nanoscale pattern transfer.
- This method facilitates the precise fabrication of nanostructures essential for next-generation semiconductor devices.
