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CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer
1CEA LETI MINATEC, Grenoble, France. guillaume.gay@cea.fr
Nanotechnology
|September 30, 2010
Abstract:
A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al(2)O(3)) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al(2)O(3) nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.

