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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent

Heiko Frenzel1, Alexander Lajn, Holger von Wenckstern

  • 1Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig, Germany. HFrenzel@physik.uni-leipzig.de

Advanced Materials (Deerfield Beach, Fla.)
|September 30, 2010
PubMed

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