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Bandgap opening in oxygen plasma-treated graphene
Amirhasan Nourbakhsh1, Mirco Cantoro, Tom Vosch
1IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. nourbakh@imec.be
Nanotechnology
|October 5, 2010
Summary
Oxygen plasma transforms single-layer graphene from semimetallic to semiconducting. This bandgap opening, dependent on plasma exposure time, is due to oxygen atom functionalization and impacts optoelectronic properties.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Single-layer graphene exhibits unique semimetallic properties.
- Controlling graphene's electronic properties is crucial for advanced applications.
- Plasma treatments offer a method for surface modification of 2D materials.
Purpose of the Study:
- To investigate the effect of oxygen plasma exposure on graphene's electronic nature.
- To determine the relationship between plasma treatment duration and observed property changes.
- To elucidate the mechanism behind the observed electronic transitions.
Main Methods:
- Exposure of single-layer graphene to oxygen plasma for varying durations.
- Electrical transport measurements to assess conductivity.
- Photoluminescence and Raman spectroscopy for material characterization.
- Ab initio calculations to model atomistic interactions and electronic structure.
Main Results:
- A transition from semimetallic to semiconducting behavior in graphene was observed.
- The degree of bandgap opening correlated with the duration of oxygen plasma exposure.
- Spectroscopic and electrical data confirmed the electronic changes.
- Ab initio calculations revealed oxygen atom functionalization as the cause.
Conclusions:
- Oxygen plasma treatment effectively induces a tunable bandgap in single-layer graphene.
- The functionalization of graphene's lattice with oxygen atoms alters its optoelectronic properties.
- This controlled modification opens pathways for graphene-based semiconductor devices.

