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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Related Experiment Video

Updated: Jun 8, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors.

K E Moselund1, H Ghoneim, H Schmid

  • 1IBM Research-Zurich, Rüschlikon, Switzerland. kmo@zurich.ibm.com

Nanotechnology
|October 5, 2010
PubMed
Summary

This study introduces a new method for doping silicon nanowires (NWs) using solid-state diffusion, achieving high concentrations for both n-type and p-type doping. This technique is efficient and uniform across various nanowire diameters.

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Last Updated: Jun 8, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Selective doping of silicon nanowires (NWs) is crucial for advanced nanoelectronic devices.
  • Existing doping methods face challenges in achieving high concentrations and uniformity in NWs.

Purpose of the Study:

  • To investigate solid-state diffusion from a doped oxide layer as a method for selective silicon nanowire doping.
  • To demonstrate the efficiency, uniformity, and tunability of this doping technique.
  • To fabricate and characterize NMOS and PMOS devices using doped silicon nanowires.

Main Methods:

  • Plasma-enhanced chemical vapor deposition (PECVD) to create doped oxide layers.
  • Solid-state diffusion at high temperatures (800-950°C) for doping silicon nanowires.
  • Fabrication of NMOS and PMOS transistors with doped NWs.

Main Results:

  • Achieved n-type (phosphorous) and p-type (boron) doping up to 10^20 cm^-3.
  • Doping efficiency is higher for NWs compared to planar substrates.
  • Uniform doping observed across NW diameters from 25 to 80 nm.
  • Doping concentration is tunable by adjusting drive-in temperature.
  • Fabricated devices exhibit high on/off ratios (~10^7), good saturation, and low hysteresis.

Conclusions:

  • Solid-state diffusion from PECVD-derived oxide layers is an effective method for doping silicon nanowires.
  • The technique allows for controlled, uniform doping and device fabrication with excellent electrical characteristics.
  • This approach offers versatility for creating segmented doping and advanced nanoelectronic devices.