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Graphene oxide thin films for flexible nonvolatile memory applications.

Hu Young Jeong1, Jong Yun Kim, Jeong Won Kim

  • 1Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea.

Nano Letters
|October 6, 2010
PubMed
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Graphene oxide offers a promising solution for flexible electronics memory. This novel room-temperature fabricated memory demonstrates reliable performance and a clear understanding of its resistive switching mechanism.

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Nanotechnology

Background:

  • Demand for low-cost, large-area, low-power nonvolatile memory for flexible electronics is high.
  • Metal oxide resistive memory shows promise but faces limitations with flexible substrates due to fabrication temperature.
  • Graphene oxide presents a potential alternative for next-generation flexible memory devices.

Purpose of the Study:

  • To develop and characterize a graphene oxide-based resistive memory suitable for large-area flexible electronics.
  • To elucidate the microscopic mechanism behind the observed bipolar resistive switching behavior.
  • To advance the understanding of graphene oxide films for future flexible electronic applications.

Main Methods:

  • Room temperature spin-casting fabrication of graphene oxide films on flexible substrates.

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  • Characterization of memory performance, including retention and endurance.
  • High-resolution transmission electron microscopy (HRTEM) and in situ X-ray photoemission spectroscopy (XPS) for microscopic analysis.

    • Main Results:

    • A novel graphene oxide-based memory device was successfully fabricated at room temperature on flexible substrates.
    • The device exhibited reliable nonvolatile memory performance with good retention and endurance.
    • Bipolar resistive switching was attributed to the rupture and formation of conducting filaments at the amorphous interface layer between graphene oxide and the aluminum electrode.

    Conclusions:

    • Graphene oxide is a viable material for fabricating high-performance, low-cost, room-temperature processed nonvolatile memory on flexible substrates.
    • The study clarifies the fundamental physics of resistive switching in graphene oxide, paving the way for its integration into flexible electronics.
    • This work represents a significant advancement in developing next-generation memory technologies for flexible electronic applications.