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An ultraclean tip-wear reduction scheme for ultrahigh density scanning probe-based data storage
Noureddine Tayebi1, Yuegang Zhang, Robert J Chen
1Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95054, United States.
ACS Nano
|October 9, 2010
Summary
Introducing a thin water crystal layer at the probe tip-media interface resolves mechanical wear in ferroelectric memory devices. This innovation maintains high data storage density and read-write speeds over extended device lifetimes.
Area of Science:
- Materials Science
- Nanotechnology
- Data Storage
Background:
- Ferroelectric memory devices offer high data storage density and speed.
- Mechanical wear of the probe tip during high-speed scanning limits device lifespan and resolution.
- Existing probe tips wear significantly over 5-10 years of operation.
Purpose of the Study:
- To address the probe tip wear issue in ferroelectric memory devices.
- To enhance the long-term reliability and resolution of probe-based data storage.
- To enable ultrahigh data storage densities over extended operational periods.
Main Methods:
- Introducing a thin water layer at the probe tip-ferroelectric media interface, forming a liquid crystal.
- Modulating tip-surface contact force using the water crystal layer as a viscoelastic material.
- Testing probe tip wear endurance and write-read resolution over extended sliding distances and velocities.
Main Results:
- The water crystal layer effectively reduces stress on atomic bonds, mitigating probe tip wear.
- A platinum-iridium probe tip maintained its resolution over 5 km of sliding at 5 mm/s.
- Demonstrated a record 3.6 Tbit/inch² storage density on ferroelectric films over a 1 × 1 μm² area.
Conclusions:
- A thin water crystal layer is a viable solution to overcome probe tip wear in ferroelectric memory devices.
- This approach significantly enhances the durability and performance of high-density data storage systems.
- The findings pave the way for next-generation, long-lasting, high-capacity data storage technologies.

