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Updated: Jun 8, 2026
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
Numerical analysis of deep sub-wavelength integrated plasmonic devices based on Semiconductor-Insulator-Metal strip
Xiao-Yang Zhang1, A Hu, J Z Wen
1School of Electronic Science and Engineering, Southeast University, and Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, Nanjing, 210096, People's Republic of China.
Abstract:
We report the first study of nanoscale integrated photonic devices constructed with semiconductor-insulator-metal strip (SIMS) waveguides for use at telecom wavelengths. These waveguides support hybrid plasmonic modes transmitting through a 5-nm thick insulating region with a normalized intensity of 200-300 μm(-2). Their fundamental mode, unique transmission and dispersion properties are consistent with photonic devices for guiding and routing of signals in communication applications. It has been demonstrated using Finite Element Methods (FEM) that the high performance SIMS waveguide can be used to fabricate deep sub-wavelength integrated plasmonic devices such as directional couplers with the ultra short coupling lengths, sharply bent waveguides, and ring resonators having a functional size of ≈1 µm and with low insertion losses and nearly zero radiation losses.
