Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers
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Updated: Jan 8, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Ksenia A Fedorova1, Maria Ana Cataluna, Igor Krestnikov
1Photonics & Nanoscience Group, School of Engineering, Physics and Mathematics, University of Dundee, Dundee, DD1 4HN, UK. k.a.fedorova@dundee.ac.uk
Abstract:
A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability.
