Related Experiment Video
Updated: Jun 8, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Hybrid plasmon/dielectric waveguide for integrated silicon-on-insulator optical elements
P D Flammer1, J M Banks, T E Furtak
1Department of Physics, Colorado School of Mines, Golden, CO 80401, USA. pflammer@mines.edu
Abstract:
VLSI compatible optical waveguides on silicon are currently of particular interest in order to integrate optical elements onto silicon chips, and for possible replacements of electrical cross-chip/inter-core interconnects. Here we present simulation and experimental verification of a hybrid plasmon/dielectric, single-mode, single-polarization waveguide for silicon-on-insulator wafers. Its fabrication is compatible with VLSI processing techniques, and it possesses desirable properties such as the absence of birefringence and low sensitivity to surface roughness and metallic losses. The waveguide structure naturally forms an MOS capacitor, possibly useful for active device integration. Simulations predict very long propagation lengths of millimeter scale with micron scale confinement, or sub-micron scale confinement with propagation lengths still in excess of 100 microns. The waveguide may be tuned continuously between these states using standard VLSI processing. Extremely long propagation lengths have been simulated: one configuration presented here has a simulated propagation length of 34 cm.

