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Published on: April 1, 2020
Hybrid plasmon/dielectric waveguide for integrated silicon-on-insulator optical elements
P D Flammer1, J M Banks, T E Furtak
1Department of Physics, Colorado School of Mines, Golden, CO 80401, USA. pflammer@mines.edu
Optics Express
|October 14, 2010
Summary
We developed a hybrid plasmon/dielectric optical waveguide for silicon chips. This technology offers long propagation lengths and VLSI compatibility, paving the way for integrated silicon photonics.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Integrating optical functionalities onto silicon chips is crucial for advanced computing and communication.
- Existing optical waveguides face challenges with miniaturization, fabrication compatibility, and signal loss.
- Electrical interconnects are limited by power consumption and speed at higher bandwidths.
Purpose of the Study:
- To present a novel hybrid plasmon/dielectric optical waveguide for silicon-on-insulator (SOI) wafers.
- To demonstrate its compatibility with Very Large Scale Integration (VLSI) processing.
- To achieve high performance in terms of propagation length and mode confinement.
Main Methods:
- Utilizing a hybrid plasmonic and dielectric waveguide design.
- Performing simulations to predict waveguide performance.
- Conducting experimental verification on silicon-on-insulator wafers.
- Investigating tunability through standard VLSI processing techniques.
Main Results:
- The waveguide is single-mode and single-polarization, with VLSI-compatible fabrication.
- It exhibits no birefringence and low sensitivity to surface roughness and metallic losses.
- Simulations predict millimeter-scale propagation with micron confinement, and >100 micron propagation with sub-micron confinement.
- One configuration shows a simulated propagation length of 34 cm.
Conclusions:
- The hybrid plasmon/dielectric waveguide is a promising candidate for on-chip optical interconnects.
- Its properties are suitable for integration into silicon photonics platforms.
- The inherent MOS capacitor structure opens possibilities for active device integration.

