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Published on: May 13, 2020
Abnormal polarization switching phenomenon in a-plane AlxGa(1-)xN
Huei-Min Huang1, Hung-Hsun Huang, Yuh-Renn Wu
1Department of Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan.
Abstract:
The optical polarization properties of a-plane AlxGa(1-)xN films have been investigated by polarization-dependent photoluminescence (PL). The degree of polarization decreased with increasing the Al composition, and the main optical polarization direction switched from ε ⊥ cto ε // c at about x = 0.07 due to the valence band switching, representing that the optical transition energy of ε // c is surpassing that of ε ⊥ c. However, with the Al composition larger than x = 0.1, the higher energy optical transitions of ε // cexhibited the stronger PL intensity, opposite to the normal situations that higher energy states commonly have weaker PL intensity than the lower energy states. We utilized the 6 × 6 k.p model and the lambertian-like radiation pattern assumption to explain this abnormal optical polarization switching behavior in the a-plane AlxGa(1-)xN layers and obtained good agreement with the experimental results.
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