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Updated: Jun 8, 2026
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Quantitative evaluation of boron-induced disorder in multilayers containing silicon nanocrystals in an oxide matrix
G Zatryb1, A Podhorodecki, X J Hao
1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland.
Abstract:
The effect of doping by boron on optical properties of multilayers containing Si-NCs were studied by means of photoluminescence (PL), time-resolved PL, photoluminescence excitation (PLE), transmission and reflection measurements. It was found that PL decay is strongly non-single exponential and can be described by means of Laplace transform of log-normal decay rates distribution. It was also proposed that changes observed in the distribution central moments reflect the disorder induced by boron-doping.
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