Related Experiment Video
Updated: Jun 8, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Local gate effect of mechanically deformed crossed carbon nanotube junction
Quan Qing1, Daniel A Nezich, Jing Kong
1Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Center for Nanoscale Science and Technology, Peking University, Beijing 100871, China.
Abstract:
In this work, we have demonstrated that the local deformation at the crossed carbon nanotube (CNT) junctions can introduce significant tunable local gate effect under ambient environment. Atomic force microscope (AFM) manipulation of the local deformation yielded a variation in transconductance that was retained after removing the AFM tip. Application of a large source-drain voltage and pressing the CNT junction above a threshold pressure can respectively erase and recover the transconductance modulation reversibly. The local gate effect is found to be independent of the length of the crossed CNT and attributed to the charges residing at the deformed junctions due to formation of localized states. The number of localized charges is estimated to be in the range of 10(2) to 10(3). These results may find potential applications in electromechanical sensors and could have important implications for designing nonvolatile devices based on crossed CNT junctions.
More Related Videos
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Cell-matrix's Response to Mechanical Forces
Anchoring junctions mechanically attach a cell to the...

