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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

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Atomic scale interface engineering for strain compensated epitaxially grown InAs/AlSb superlattices.

A Bauer¹, M Dallner, A Herrmann

¹Technische Physik, Physikalisches Institut, Julius-Maximilians-Universität Würzburg, Würzburg, Germany. adam.bauer@physik.uni-wuerzburg.de

|October 16, 2010

Summary

Strain compensation in InAs/AlSb superlattices is achievable using cracked arsenic. This method enables high-quality material growth without intermixing, crucial for advanced semiconductor devices.

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Area of Science:

Materials Science
Solid State Physics
Semiconductor Heterostructures

Background:

Indium arsenide/aluminum antimonide (InAs/AlSb) superlattices are critical for high-speed electronics.
Achieving strain compensation in these heterostructures is essential for device performance and material stability.

Purpose of the Study:

To systematically investigate strain compensation strategies for InAs/AlSb superlattices grown on Gallium antimonide (GaSb) substrates.
To explore the impact of growth interruptions and arsenic/antimony fluxes on strain management.

Main Methods:

Utilized short growth interruptions (soak times) with controlled arsenic and antimony beam fluxes.
Investigated the effect of cracked As(2) dimers versus uncracked As(4) on interface formation.
Employed high-resolution X-ray diffraction and transmission electron microscopy for material characterization.

Main Results:

Strain compensation was unachievable with uncracked As(4) without AlAs spikes.
Cracked As(2) directly formed strain-compensating AlAs-like interfaces.
Enabled soak-time-free and Sb-soak-only growth sequences for superlattices.

Conclusions:

Cracked As(2) is a key enabler for effective strain compensation in InAs/AlSb superlattices.
The developed methods yield high-quality layers with minimal heterointerface intermixing.
These findings facilitate the fabrication of advanced semiconductor devices based on InAs/AlSb heterostructures.