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Silicon rice-straw array emitters and their superior electron field emission
Hung-Chi Wu1, Hung-Yin Tsai, Hsin-Tien Chiu
1Department of Materials Science and Engineering, Department of Power Mechanical Engineering, and Center for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China.
ACS Applied Materials & Interfaces
|October 23, 2010
Summary
Fabricated silicon rice-straw array emitters using a modified method offer excellent electron field emission (EFE). This scalable technique produces sharper emitters, making them a promising alternative for silicon-based field emitters.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Silicon-based field emitters are crucial for various electronic applications.
- Conventional fabrication methods often face limitations in controlling emitter density and apex sharpness.
Purpose of the Study:
- To develop a modified electroless metal deposition (EMD) method for fabricating silicon rice-straw array emitters.
- To enhance the electron field emission (EFE) performance by optimizing emitter density and apex morphology.
Main Methods:
- Fabrication of vertically aligned silicon rice-straw-like array emitters using a modified EMD process.
- Utilized HF-H(2)O(2) etching solution to control emitter density and sharpen emitter apexes.
- Performed electron field emission measurements and simple simulations to evaluate performance.
Main Results:
- Achieved turn-on field (E(0)) of 4.7 V/μm and current density (J(e)) of 139 μA/cm(2) at 12.8 V/μm.
- The modified EMD method resulted in sharper emitter apexes and favorable emitter distribution.
- Excellent EFE performance was attributed to optimized emitter array distribution and apex shape.
Conclusions:
- The modified EMD method provides a scalable and cost-effective approach for producing high-performance silicon rice-straw array emitters.
- These emitters demonstrate significant potential as a viable alternative to conventional silicon-based field emitters.
- The enhanced emitter morphology directly contributes to improved electron field emission characteristics.
