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Application of Monolayer Graphene to Cryo-Electron Microscopy Grids for High-resolution Structure Determination
Published on: November 10, 2023
High spatial resolution ellipsometer for characterization of epitaxial graphene
Peter E Gaskell1, Helgi S Skulason, Wlodek Strupinski
1Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, H3A-2A7, Canada. peter.gaskell@mail.mcgill.ca
Optics Letters
|October 23, 2010
Summary
This study demonstrates a high-resolution ellipsometer capable of accurately measuring graphene layers. The technique achieves single-atomic-layer sensitivity, crucial for characterizing graphene films.
Area of Science:
- Materials Science
- Nanotechnology
- Optics
Background:
- Graphene characterization is essential for its electronic applications.
- Accurate determination of graphene layer number is challenging.
- Existing methods may lack spatial resolution or sensitivity.
Purpose of the Study:
- To develop a high spatial resolution ellipsometry technique for graphene layer number measurement.
- To assess the sensitivity of ellipsometry to graphene layers on different substrates.
- To demonstrate the utility of this method for rapid graphene film characterization.
Main Methods:
- Utilized a custom-built ellipsometer with a 3μm×5μm spot size.
- Employed a single focusing and imaging element for optical control.
- Measured exfoliated graphene on glass and epitaxial graphene on Silicon Carbide (SiC).
Main Results:
- Achieved single-atomic-layer sensitivity in graphene layer number determination.
- Observed increased ellipsometric sensitivity with decreasing graphene layer number.
- Demonstrated higher sensitivity on substrates with lower refractive indices.
- Showcased high spatial resolution imaging and ellipsometry capabilities.
Conclusions:
- High spatial resolution ellipsometry is a powerful tool for graphene characterization.
- The developed method enables rapid and sensitive measurement of graphene layers.
- This technique is particularly valuable for epitaxially grown graphene films.
