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Updated: Jun 7, 2026

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Controllable N-doping of graphene.

Beidou Guo1, Qian Liu, Erdan Chen

  • 1Laboratory for Nanodevices, National Center for Nanoscience and Technology, China, 11 Zhongguancun Beiyitiao, Beijing 100190, People's Republic of China.

Nano Letters
|October 26, 2010
PubMed
Summary

Researchers created nitrogen-doped graphene by ion irradiation and ammonia annealing. This process controllably introduces defects and nitrogen, enabling a transition from p-type to n-type graphene for electronic devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Tuning the electronic properties of graphene is crucial for its integration into advanced electronic devices.
  • Creating an energy gap in graphene is a key challenge for many applications.

Purpose of the Study:

  • To develop a controllable method for nitrogen doping of graphene.
  • To investigate the effects of nitrogen doping on graphene's microstructure and electronic transport properties.
  • To demonstrate the potential of N-doped graphene for electronic applications.

Main Methods:

  • Graphene samples were subjected to nitrogen ion (N+) irradiation at various fluences.
  • Raman spectroscopy was used to analyze microstructural changes and defect evolution.

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  • Auger electron spectroscopy (AES) confirmed the presence of nitrogen in the annealed samples.
  • Field-effect transistors (FETs) were fabricated using N-doped graphene to evaluate transport properties.

    • Main Results:

    • Ion irradiation introduced in-plane defects in graphene, which were partially restored by subsequent annealing.
    • Annealing in ammonia (NH3) after irradiation successfully incorporated nitrogen into the graphene lattice, confirmed by AES.
    • FET measurements showed a shift in the Dirac point of N-doped graphene, indicating a transition from p-type to n-type conductivity.
    • The transport properties of N-doped graphene differed significantly from intrinsic graphene.

    Conclusions:

    • The combined approach of N+ ion irradiation and NH3 annealing provides a controllable method for producing n-type graphene.
    • This technique offers a pathway for defect engineering and heteroatom doping in graphene.
    • The developed method holds promise for the fabrication of next-generation graphene-based electronic devices.