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Updated: Jun 7, 2026
Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Direct detection of hole gas in Ge-Si core-shell nanowires by enhanced Raman scattering
Shixiong Zhang1, Francisco J Lopez, Jerome K Hyun
1Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
Abstract:
We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F2g mode in Raman spectra. Raman enhancements of 10-10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.
