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Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Semiconductors

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Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

MOSFET: Enhancement Mode

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Related Experiment Video

Updated: Jun 7, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Highly efficient coupling semiconductor spot-size converter with an InP/InAlAs multiple-quantum-well core.

N Yoshimoto, K Kawano, H Takeuchi

|November 2, 2010

Summary

This study demonstrates a novel spot-size converter (SSC) using a tapered semiconductor waveguide. The device achieves high coupling efficiency and improved misalignment tolerances for efficient fiber-optic communication.

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Area of Science:

Optoelectronics
Semiconductor Devices
Photonics

Background:

Efficient coupling between semiconductor devices and optical fibers is crucial for optoelectronic systems.
Conventional methods often suffer from significant coupling losses and limited misalignment tolerance.

Purpose of the Study:

To demonstrate a highly efficient spot-size converter (SSC) for improved fiber-optic coupling.
To enhance misalignment tolerances and reproducibility in semiconductor-to-fiber connections.

Main Methods:

Fabrication of a tapered semiconductor waveguide using InGaAsP and InP/InAlAs multiple quantum well (MQW).
Adjustment of the MQW core's equivalent refractive index via well-to-barrier layer thickness ratio.
Characterization of coupling efficiency and misalignment tolerances.

Main Results:

Achieved a high coupling efficiency of 1.4 dB.
Demonstrated lateral and axial misalignment tolerances 3 times better than conventional waveguides.
Exhibited high reproducibility due to large fabrication tolerances.

Conclusions:

The developed SSC offers superior performance for semiconductor chip-to-fiber coupling.
The device's enhanced tolerances and reproducibility are beneficial for practical optoelectronic applications.